SIHD11 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 800V 8A TO252AA
| Part | Package / Case | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | FET Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | TO-252AA | 804 pF | 78 W | 450 mOhm | 10 V | 30 V | N-Channel | MOSFET (Metal Oxide) | -55 °C | 150 °C | 4 V | 42 nC | 8 A | 800 V |