SCS210 Series

1200V, 10A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Catalog

1200V, 10A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Part	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Mounting Type	Supplier Device Package	Operating Temperature - Junction	Speed	Current - Reverse Leakage @ Vr	Technology	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Grade	Qualification	Current - Average Rectified (Io)	Capacitance @ Vr, F
Rohm Semiconductor SCS210KE2GC11	5 A	1.2 kV	1 Pair Common Cathode	Through Hole	TO-247N	175 °C	500 mA	100 µA	SiC (Silicon Carbide) Schottky	TO-247-3	0 ns	1.6 V	5 A
Rohm Semiconductor SCS210KE2HRC11	5 A	1.2 kV	1 Pair Common Cathode	Through Hole	TO-247	175 °C	500 mA	100 µA	SiC (Silicon Carbide) Schottky	TO-247-3	0 ns	1.6 V	5 A
Rohm Semiconductor SCS210KE2HRC	20 A	650 V	1 Pair Common Cathode	Through Hole	TO-247		500 mA	400 µA	SiC (Silicon Carbide) Schottky	TO-247-3		1.55 V		175 ░C	Automotive	AEC-Q101
Rohm Semiconductor SCS210AMC		650 V		Through Hole	TO-220FM		500 mA	200 µA	SiC (Silicon Carbide) Schottky	TO-220-2	0 ns		1.55 V	175 ░C			10 A	365 pF

1200V, 10A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Switching loss reduced, enabling high-speed switching . (3-pin package)