SI4434 Series

Catalog

MOSFET N-CH 250V 2.1A 8SO

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI4434DY-T1-GE3	20 V	250 V	8-SOIC	3.9 mm	0.154 in	50 nC	Surface Mount	155 mOhm	8-SOIC	2.1 A	6 V 10 V	N-Channel	4 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1.56 W
Vishay General Semiconductor - Diodes Division SI4434ADY-T1-GE3	20 V	250 V	8-SOIC	3.9 mm	0.154 in	16.5 nC	Surface Mount		8-SO	2.8 A 4.1 A		N-Channel	4 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2.9 W 6 W	150 mOhm	10 V	7.5 V	600 pF