TK16G60W Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.19 Ω@10V, D2PAK, DTMOSⅣ
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Power Dissipation (Max) | Technology | Package / Case | Supplier Device Package | FET Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 38 nC | 10 V | 150 °C | 130 W | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | N-Channel | 3.7 V | 600 V | Surface Mount | 30 V | 1350 pF | 190 mOhm | 15.8 A |