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28 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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28 V, P-channel Trench MOSFET
28 V, P-channel Trench MOSFET
| Part | FET Type | Grade | Vgs(th) (Max) @ Id | Vgs (Max) | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | P-Channel | Automotive | 1 V | 12 V | Surface Mount | TO-236AB | 1.8 V | 4.5 V | 28 V | 4 A | 1254 pF | SC-59 SOT-23-3 TO-236-3 | 21 nC | 50 mOhm | 7 W 510 mW | MOSFET (Metal Oxide) | 150 °C | -55 °C | AEC-Q101 |