SIHB30 Series

Catalog

MOSFET N-CH 600V 29A D2PAK

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIHB30N60E-GE3	Surface Mount	2600 pF	MOSFET (Metal Oxide)	600 V	10 V	N-Channel	29 A	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 mOhm	TO-263 (D2PAK)	130 nC	250 W	4 V	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHB30N60AEL-GE3	Surface Mount		MOSFET (Metal Oxide)	600 V	10 V	N-Channel	28 A	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 mOhm	TO-263 (D2PAK)	120 nC	250 W	4 V	-55 °C	150 °C	2565 pF