IR21363 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 28SOIC

Part	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Input Type	Supplier Device Package	Driven Configuration	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [custom]	Package / Case	Package / Case [custom]	Channel Type	Logic Voltage - VIL, VIH	Mounting Type	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]
INFINEON IR21363SPBF	125 ns	50 ns	12 VDC	20 V	Inverting	28-SOIC	Half-Bridge	IGBT MOSFET (N-Channel)	-40 °C	150 °C	6	600 V	0.295 "	28-SOIC	7.5 mm	3-Phase	0.8 V 3 V	Surface Mount
INFINEON IR21363JPBF	125 ns	50 ns	12 VDC	20 V	Inverting	44-PLCC	Half-Bridge	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	6	600 V		44-LCC (J-Lead) 32 Leads		3-Phase	0.8 V 3 V	Surface Mount	32	16.58	16.58
INFINEON IR21363JTRPBF	125 ns	50 ns	12 VDC	20 V	Inverting	44-PLCC	Half-Bridge	IGBT MOSFET (N-Channel)	-40 °C	150 °C	6	600 V		44-LCC (J-Lead) 32 Leads		3-Phase	0.8 V 3 V	Surface Mount	32	16.58	16.58
INFINEON IR21363SPBF	125 ns	50 ns	12 VDC	20 V	Inverting	28-SOIC	Half-Bridge	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	6	600 V	0.295 "	28-SOIC	7.5 mm	3-Phase	0.8 V 3 V	Surface Mount
INFINEON IR21363JTRPBF	125 ns	50 ns	12 VDC	20 V	Inverting	44-PLCC	Half-Bridge	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	6	600 V		44-LCC (J-Lead) 32 Leads		3-Phase	0.8 V 3 V	Surface Mount	32	16.58	16.58
INFINEON IR21363STRPBF	125 ns	50 ns	12 VDC	20 V	Inverting	28-SOIC	Half-Bridge	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	6	600 V	0.295 "	28-SOIC	7.5 mm	3-Phase	0.8 V 3 V	Surface Mount
INFINEON IR21363STRPBF	125 ns	50 ns	12 VDC	20 V	Inverting	28-SOIC	Half-Bridge	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	6	600 V	0.295 "	28-SOIC	7.5 mm	3-Phase	0.8 V 3 V	Surface Mount