RN2713 Series
Manufacturer: Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
| Part | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Transistor Type | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Resistor - Base (R1) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 200 MHz | 300 mV | 120 | ESV | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 100 mW | 100 nA | 100 mA | Surface Mount | 50 V | SOT-553 | 47 kOhms |