PSC2065L Series

650 V, 20 A SiC Schottky diode in TO247 R2P

Catalog

650 V, 20 A SiC Schottky diode in TO247 R2P

Part	Current - Reverse Leakage @ Vr	Technology	Capacitance @ Vr, F	Speed	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Mounting Type	Package / Case
Nexperia USA Inc. PSC2065LQ	180 µA	SiC (Silicon Carbide) Schottky	680 pF	500 mA	1.8 V	0 ns	650 V	175 ░C	-55 °C	TO-247-2	Through Hole	TO-247-2

Catalog

650 V, 20 A SiC Schottky diode in TO247 R2P

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.