TK15A60 Series

Catalog

MOSFET N-CH 600V 15A TO220SIS

Part	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage TK15A60U(STA4,Q,M)	150 °C	15 A	600 V	300 mOhm	30 V	TO-220-3 Full Pack	40 W	Through Hole	17 nC	MOSFET (Metal Oxide)	N-Channel	950 pF	5 V	10 V	TO-220SIS
Toshiba Semiconductor and Storage TK15A60D(STA4,Q,M)	150 °C	15 A	600 V	370 mOhm	30 V	TO-220-3 Full Pack	50 W	Through Hole	45 nC	MOSFET (Metal Oxide)	N-Channel			10 V	TO-220SIS	2600 pF