IS61LPS51218 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC SRAM 9MBIT PARALLEL 100TQFP
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Size | Supplier Device Package | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Memory Organization | Mounting Type | Memory Interface | Technology | Access Time | Memory Type | Clock Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 3.135 V | 3.465 V | 9 Mbit | 100-LQFP (14x20) | 100-LQFP | 85 C | -40 ¯C | SRAM | 512K x 18 | Surface Mount | Parallel | SRAM - Synchronous SDR | 3.1 ns | Volatile | 200 MHz |
ISSI, Integrated Silicon Solution Inc | 3.135 V | 3.465 V | 9 Mbit | 100-LQFP (14x20) | 100-LQFP | 85 C | -40 ¯C | SRAM | 512K x 18 | Surface Mount | Parallel | SRAM - Synchronous SDR | 3.1 ns | Volatile | 200 MHz |
ISSI, Integrated Silicon Solution Inc | 3.135 V | 3.465 V | 9 Mbit | 100-LQFP (14x20) | 100-LQFP | 85 C | -40 ¯C | SRAM | 512K x 18 | Surface Mount | Parallel | SRAM - Synchronous SDR | 3.1 ns | Volatile | 200 MHz |
ISSI, Integrated Silicon Solution Inc | 3.135 V | 3.465 V | 9 Mbit | 100-LQFP (14x20) | 100-LQFP | 85 C | -40 ¯C | SRAM | 512K x 18 | Surface Mount | Parallel | SRAM - Synchronous SDR | 3.1 ns | Volatile | 200 MHz |
ISSI, Integrated Silicon Solution Inc | 3.135 V | 3.465 V | 9 Mbit | 100-LQFP (14x20) | 100-LQFP | 85 C | -40 ¯C | SRAM | 512K x 18 | Surface Mount | Parallel | SRAM - Synchronous SDR | 3.1 ns | Volatile | 200 MHz |
ISSI, Integrated Silicon Solution Inc | 3.135 V | 3.465 V | 9 Mbit | 100-LQFP (14x20) | 100-LQFP | 85 C | -40 ¯C | SRAM | 512K x 18 | Surface Mount | Parallel | SRAM - Synchronous SDR | 3.1 ns | Volatile | 200 MHz |