IR2111 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8SOIC

Part	Gate Type	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Channel Type	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Package / Case	Package / Case	Package / Case	Supplier Device Package
INFINEON IR2111S	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	250 mA	500 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	20 V	10 VDC	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm	8-SOIC
INFINEON IR2111STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	250 mA	500 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	20 V	10 VDC	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm	8-SOIC
INFINEON IR2111	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	250 mA	500 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Through Hole	20 V	10 VDC	-40 °C	150 °C	Non-Inverting		8-DIP (0.300" 7.62mm)		8-PDIP
INFINEON IR2111SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	250 mA	500 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	20 V	10 VDC	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm	8-SOIC
INFINEON IR2111STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	2	250 mA	500 mA	Half-Bridge	40 ns	80 ns	600 V	8.3 V	12.6 V	Synchronous	Surface Mount	20 V	10 VDC	-40 °C	150 °C	Non-Inverting	0.154 in	8-SOIC	3.9 mm	8-SOIC