CNY117 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

OPTOISOLTR 5KV TRANSISTOR 6-DIP

Part	Number of Channels	Mounting Type	Package / Case	Package / Case	Package / Case	Vce Saturation (Max) [Max]	Current Transfer Ratio (Min) [Min]	Voltage - Forward (Vf) (Typ)	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Output (Max) [Max]	Output Type	Current - DC Forward (If) (Max) [Max]	Current - Output / Channel	Turn On / Turn Off Time (Typ)	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current Transfer Ratio (Max)	Package / Case
Vishay General Semiconductor - Diodes Division CNY117F-2X016	1	Through Hole	6-DIP	10.16 mm	10.16 mm	400 mV	63 %	1.39 V	2 µs	2 µs	70 V	1.81 mOhm	60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-DIP	125 %
Vishay General Semiconductor - Diodes Division CNY117F-2X006	1	Through Hole	6-DIP	10.16 mm	10.16 mm	400 mV	63 %	1.39 V	2 µs	2 µs	70 V	1.81 mOhm	60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-DIP	125 %
Vishay General Semiconductor - Diodes Division CNY117F-4X016	1	Through Hole	6-DIP	10.16 mm	10.16 mm	400 mV	160 %	1.39 V	2 µs	2 µs	70 V	1.81 mOhm	60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-DIP	320 %
Vishay General Semiconductor - Diodes Division CNY117F-4X017T	1	Surface Mount	6-SMD Gull Wing			400 mV	160 %	1.39 V	2 µs	2 µs	70 V	1.81 mOhm	60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-SMD	320 %
Vishay General Semiconductor - Diodes Division CNY117-2X016	1	Through Hole	6-DIP	10.16 mm	10.16 mm	400 mV	63 %	1.39 V	2 µs	2 µs	70 V		60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-DIP	125 %
Vishay General Semiconductor - Diodes Division CNY117F-1	1	Through Hole	6-DIP		7.62 mm	400 mV	40 %	1.39 V	2 µs	2 µs	70 V	1.81 mOhm	60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-DIP	80 %	0.3 in
Vishay General Semiconductor - Diodes Division CNY117-3X001	1	Through Hole	6-DIP		7.62 mm	400 mV	100 %	1.39 V	2 µs	2 µs	70 V		60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-DIP	200 %	0.3 in
Vishay General Semiconductor - Diodes Division CNY117-1X001	1	Through Hole	6-DIP		7.62 mm	400 mV	40 %	1.39 V	2 µs	2 µs	70 V		60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-DIP	80 %	0.3 in
Vishay General Semiconductor - Diodes Division CNY117-2X001	1	Through Hole	6-DIP		7.62 mm	400 mV	63 %	1.39 V	2 µs	2 µs	70 V		60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-DIP	125 %	0.3 in
Vishay General Semiconductor - Diodes Division CNY117-1X016	1	Through Hole	6-DIP	10.16 mm	10.16 mm	400 mV	40 %	1.39 V	2 µs	2 µs	70 V		60 mA	50 mA	2.3 µs 3 µs	DC	-55 °C	110 °C	6-DIP	80 %