IGD616 Series
Manufacturer: POWER INTEGRATIONS
IC GATE DRVR HI/LOW SIDE MODULE
| Part | Gate Type | Number of Drivers | Voltage - Supply [Max] | Voltage - Supply [Min] | Channel Type | Package / Case | Driven Configuration | Rise / Fall Time (Typ) | Supplier Device Package | Input Type | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Logic Voltage - VIL, VIH |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
POWER INTEGRATIONS | IGBT MOSFET (N-Channel P-Channel) N-Channel P-Channel MOSFET | 1 | 16 V | 14 V | Single | 36-DIP Module 24 Leads | High-Side or Low-Side | 80 ns 100 ns | Module | Inverting | Through Hole | 85 C | -40 ¯C | |||
POWER INTEGRATIONS | IGBT MOSFET (N-Channel P-Channel) N-Channel P-Channel MOSFET | 1 | 16 V | 14 V | Single | 36-DIP Module 24 Leads | High-Side or Low-Side | 80 ns 100 ns | Module | Inverting | Through Hole | 85 C | -40 ¯C | |||
POWER INTEGRATIONS | IGBT MOSFET (N-Channel P-Channel) N-Channel P-Channel MOSFET | 1 | 16 V | 14 V | Single | 36-DIP Module 24 Leads | High-Side or Low-Side | 80 ns 100 ns | Module | Non-Inverting | Through Hole | 85 C | -40 ¯C | |||
POWER INTEGRATIONS | IGBT MOSFET (N-Channel P-Channel) N-Channel P-Channel MOSFET | 1 | 16 V | 14 V | Single | 36-DIP Module 24 Leads | High-Side or Low-Side | 80 ns 100 ns | Module | Through Hole | 85 C | -40 ¯C | 16 A | 16 A | 0.9 V 3.8 V |