Catalog
PNP Epitaxial Silicon Transistor
Key Features
• Collector-Emitter Voltage : VCEO= KSP55: 60V
• Collector-Emitter Voltage : VCEO=KSP56: 80V
• Collector Dissipation: PC(max) = 625mWAmplifier Transistor
Beta
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PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
| Part | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | Supplier Device Package | Operating Temperature | Package / Case | Frequency - Transition | Mounting Type | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 625 mW | 250 mV | 100 nA | 50 hFE | PNP | 60 V | TO-92-3 | 150 °C | TO-226-3 TO-92-3 | 50 MHz | Through Hole | 500 mA |