NTBG080N120SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

Part	FET Type	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTBG080N120SC1	N-Channel	D2PAK-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	1200 V	1154 pF	179 W	-15 V	25 V	110 mOhm	4.3 V	Surface Mount	-55 °C	175 ░C	56 nC	30 A

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

Key Features

• Low On Resistance

• High Junction Temperature

• Ultra Low Gate Charge

• Low Effective Output Capacitance

• This device is RoHS Compliant

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.