IRF9Z30 Series

Catalog

MOSFET P-CH 50V 18A TO220AB

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Vishay General Semiconductor - Diodes Division IRF9Z30PBF	Through Hole	39 nC	74 W	4 V	TO-220-3	10 V	900 pF	50 V	-55 °C	150 °C	140 mOhm	TO-220AB	P-Channel	MOSFET (Metal Oxide)	18 A	20 V
Vishay General Semiconductor - Diodes Division IRF9Z30PBF-BE3	Through Hole	39 nC	74 W	4 V	TO-220-3	10 V	900 pF	50 V	-55 °C	150 °C	140 mOhm	TO-220AB	P-Channel	MOSFET (Metal Oxide)	18 A	20 V