60 V, dual N-channel Trench MOSFET
60 V, dual N-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | Configuration | Technology | Qualification | Package / Case | Grade | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2.9 Ohm | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | AEC-Q101 | 6-XFDFN Exposed Pad | Automotive | 9.2 pF | DFN1412-6 | 5 W 420 mW | 315 pC | Surface Mount | 2.6 V | 60 V | 150 °C | -55 °C | 320 mA |