PSMN1R9-80SSJ Series

N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

Catalog

N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

Part	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
Nexperia USA Inc. PSMN1R9-80SSJJ	N-Channel	20 V	80 V	SOT-1235	29810 pF	Surface Mount	10 V	500 W	286 A	LFPAK88 (SOT1235)	1.9 mOhm	MOSFET (Metal Oxide)	175 °C	-55 °C	3 V	380 nC

Catalog

N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

Description

In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.