Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO4
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO4
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 3750 Vrms, SO4
| Part | Input Type | Output Type | Mounting Type | Supplier Device Package | Number of Channels [custom] | Current Transfer Ratio (Max) | Vce Saturation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current Transfer Ratio (Min) | Current - Output / Channel [custom] | Rise / Fall Time (Typ) | Voltage - Isolation | Current - DC Forward (If) (Max) [Max] | Voltage - Forward (Vf) (Typ) | Package / Case | Package / Case | Turn On / Turn Off Time (Typ) | Current Transfer Ratio (Min) [Min] | Current Transfer Ratio (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | DC | Transistor | Surface Mount | 4-SO | 1 | 300 % | 300 mV | -55 C | 125 °C | 150 % | 50 mA | 2 µs 3 µs | 3750 Vrms | 50 mA | 1.25 V | 0.179 in 4.55 mm | 4-SOIC | 3 µs | ||
Toshiba Semiconductor and Storage | DC | Transistor | Surface Mount | 4-SO | 1 | 300 mV | -55 C | 125 °C | 50 mA | 2 µs 3 µs | 3750 Vrms | 50 mA | 1.25 V | 0.179 in 4.55 mm | 4-SOIC | 3 µs | 200 % | 400 % | ||
 Toshiba Semiconductor and Storage | DC | Transistor | Surface Mount | 4-SO | 1 | 300 mV | -55 C | 125 °C | 50 mA | 2 µs 3 µs | 3750 Vrms | 50 mA | 1.25 V | 0.179 in 4.55 mm | 4-SOIC | 3 µs | 100 % | 600 % | ||
Toshiba Semiconductor and Storage | DC | Transistor | Surface Mount | 4-SO | 1 | 150 % | 300 mV | -55 C | 125 °C | 50 % | 50 mA | 2 µs 3 µs | 3750 Vrms | 50 mA | 1.25 V | 0.179 in 4.55 mm | 4-SOIC | 3 µs | ||
Toshiba Semiconductor and Storage | DC | Transistor | Surface Mount | 4-SO | 1 | 300 mV | -55 C | 125 °C | 50 % | 50 mA | 2 µs 3 µs | 3750 Vrms | 50 mA | 1.25 V | 0.179 in 4.55 mm | 4-SOIC | 3 µs | 600 % | ||
 Toshiba Semiconductor and Storage | DC | Transistor | Surface Mount | 4-SO | 1 | 300 mV | -55 C | 125 °C | 100 % | 50 mA | 2 µs 3 µs | 3750 Vrms | 50 mA | 1.25 V | 0.179 in 4.55 mm | 4-SOIC | 3 µs | 200 % | ||
Toshiba Semiconductor and Storage | DC | Transistor | Surface Mount | 4-SO | 1 | 300 mV | -55 C | 125 °C | 200 % | 50 mA | 2 µs 3 µs | 3750 Vrms | 50 mA | 1.25 V | 0.179 in 4.55 mm | 4-SOIC | 3 µs | 600 % | ||
Toshiba Semiconductor and Storage | DC | Transistor | Surface Mount | 4-SO | 1 | 300 mV | -55 C | 125 °C | 50 mA | 2 µs 3 µs | 3750 Vrms | 50 mA | 1.25 V | 0.179 in 4.55 mm | 4-SOIC | 3 µs | 100 % | 300 % | ||
Toshiba Semiconductor and Storage | DC | Transistor | Surface Mount | 4-SO | 1 | 150 % | 300 mV | -55 C | 125 °C | 50 mA | 2 µs 3 µs | 3750 Vrms | 50 mA | 1.25 V | 0.179 in 4.55 mm | 4-SOIC | 3 µs | 75 % |