High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.67 Ω@10V, DPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.67 Ω@10V, DPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.67 Ω@10V, DPAK, DTMOSⅣ
| Part | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 80 W | 650 V | MOSFET (Metal Oxide) | 16 nC | N-Channel | 3.5 V | 670 mOhm | Surface Mount | 570 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 V | 150 °C | 30 V | 7.8 A | DPAK |