SIR4604 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 60 V (D-S) MOSFET POWE
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | MOSFET (Metal Oxide) | 22 nC | Surface Mount | 960 pF | PowerPAK® SO-8 | N-Channel | 9.5 mOhm | PowerPAK® SO-8 | 20 V | 15.1 A 49.3 A | 3.9 W 41.6 W | 10 V | 7.5 V | 4 V | 60 V | |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | MOSFET (Metal Oxide) | 28 nC | Surface Mount | PowerPAK® SO-8 | N-Channel | 8.9 mOhm | PowerPAK® SO-8 | 20 V | 15.6 A 51 A | 3.9 W 41.6 W | 3 V | 60 V | 4.5 V 10 V |