RN2908 Series

Catalog

TRANS 2PNP PREBIAS 0.2W US6

Part	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Frequency - Transition	Transistor Type	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Package / Case	Power - Max [Max]
Toshiba Semiconductor and Storage RN2908(T5L,F,T)	300 mV	80	50 V	US6	200 MHz	2 PNP - Pre-Biased (Dual)	22 kOhms	47 kOhms	100 mA	100 nA	Surface Mount	6-TSSOP SC-88 SOT-363	200 mW
Toshiba Semiconductor and Storage RN2908FE(TE85L,F)	300 mV	80	50 V	ES6	200 MHz	2 PNP - Pre-Biased (Dual)	47 kOhms	22 kOhms	100 mA	100 nA	Surface Mount	SOT-563 SOT-666	100 mW
Toshiba Semiconductor and Storage RN2908,LXHF(CT	300 mV	80	50 V	US6	200 MHz	2 PNP - Pre-Biased (Dual)	47 kOhms	22 kOhms	100 mA	500 nA	Surface Mount	6-TSSOP SC-88 SOT-363	200 mW