SI4650 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 8A 8SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Supplier Device Package | Power - Max [Max] | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 8 A | 40 nC | 18 mOhm | 1550 pF | Surface Mount | 8-SOIC | 3.1 W | 3 V | MOSFET (Metal Oxide) | 30 V | 2 N-Channel (Half Bridge) |