Catalog
4.5V Drive Nch MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | Mounting Type | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 28 A 80 A | 2300 pF | 2.6 mOhm | 8-PowerTDFN | 4.5 V 10 V | 20 V | N-Channel | 30 V | MOSFET (Metal Oxide) | 2.5 V | Surface Mount | 150 °C | 36 nC | 8-HSOP | 3 W 31 W |
Description
AI
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.