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MPSA42(LEGACY%20FAIRCHILD) Series

NPN Bipolar Small Signal Transistor

Manufacturer: ON Semiconductor

Catalog

NPN Bipolar Small Signal Transistor

Description

AI

This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the TO-92 package.

Catalog

NPN Bipolar Small Signal Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Supplier Device Package	Supplier Device Package	Transistor Type
ON Semiconductor MPSA42RLRAG	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	25 hFE	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	TO-226	NPN
ON Semiconductor MPSA42RLRP	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	25 hFE	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	TO-226	NPN
ON Semiconductor MPSA42_D74Z	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	40	TO-226-3 TO-92-3	TO-92-3		NPN
ON Semiconductor MPSA42G	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	25 hFE	TO-226-3 TO-92-3 Long Body	TO-92	TO-226	NPN
ON Semiconductor MPSA42_J18Z	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	40	TO-226-3 TO-92-3	TO-92-3		NPN
ON Semiconductor MPSA42	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	40	TO-226-3 TO-92-3	TO-92-3		NPN
ON Semiconductor MPSA42ZL1	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	25 hFE	Formed Leads TO-226-3 TO-92-3 Long Body	TO-92	TO-226	NPN
ON Semiconductor MPSA42_D26Z	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	40	TO-226-3 TO-92-3	TO-92-3		NPN
ON Semiconductor MPSA42_D75Z	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	40	TO-226-3 TO-92-3	TO-92-3		NPN
ON Semiconductor MPSA42_D81Z	300 V	500 mA	100 nA	625 mW	-55 °C	150 °C	500 mV	50 MHz	Through Hole	40	TO-226-3 TO-92-3	TO-92-3		NPN