DRV8334 Series

60-V 1000-mA to 2000-mA 3-phase gate driver with accurate current sensing

Catalog

60-V 1000-mA to 2000-mA 3-phase gate driver with accurate current sensing

Part	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Channel Type	Number of Drivers	Gate Type	Driven Configuration	Supplier Device Package	Package / Case	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH
Texas Instruments DRV8334PHPR	65 V	Non-Inverting	-40 °C	125 °C	3-Phase	6	N-Channel MOSFET	Half-Bridge	48-HTQFP (7x7)	48-PowerTQFP	Surface Mount	4.5 V	60 V	2 A	1 A	0.8 V 2.1 V

Catalog

60-V 1000-mA to 2000-mA 3-phase gate driver with accurate current sensing

Key Features

• Three phase half-bridge gate driverDrives six N-channel MOSFETs (NMOS)4.5 to 60-V wide operating voltage rangeBootstrap architecture for high-side gate driverStrong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHzTrickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuitSmart Gate Drive architecture45-level configurable peak gate drive current up to 1000 / 2000-mA (source / sink)Three-step drive current configuration to optimize charge/discharge cycle and minimize deadtimeClosed-loop automatic deadtime insertion based on gate-source voltage monitoringConfigurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdownLow-side Current Sense AmplifierSub-1 mV low input offset across temperature9-level adjustable gainSPI-based detailed configuration and diagnosticsDRVOFF pin to disable driver independentlyHigh voltage wake up pin (nSLEEP)6x, 3x, 1x, and Independent PWM ModesSupports 3.3-V, and 5-V Logic InputsIntegrated protection featuresBattery and power supply voltage monitorsPhase feedback comparatorMOSFET VDS and Rsense over current monitorsMOSFET VGS gate fault monitorsDevice thermal warning and shutdownFault condition indicator pinThree phase half-bridge gate driverDrives six N-channel MOSFETs (NMOS)4.5 to 60-V wide operating voltage rangeBootstrap architecture for high-side gate driverStrong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHzTrickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuitSmart Gate Drive architecture45-level configurable peak gate drive current up to 1000 / 2000-mA (source / sink)Three-step drive current configuration to optimize charge/discharge cycle and minimize deadtimeClosed-loop automatic deadtime insertion based on gate-source voltage monitoringConfigurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdownLow-side Current Sense AmplifierSub-1 mV low input offset across temperature9-level adjustable gainSPI-based detailed configuration and diagnosticsDRVOFF pin to disable driver independentlyHigh voltage wake up pin (nSLEEP)6x, 3x, 1x, and Independent PWM ModesSupports 3.3-V, and 5-V Logic InputsIntegrated protection featuresBattery and power supply voltage monitorsPhase feedback comparatorMOSFET VDS and Rsense over current monitorsMOSFET VGS gate fault monitorsDevice thermal warning and shutdownFault condition indicator pin

Description

The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.7-mA up to 1-A source and 2-A sink. The DRV8334 can operate from a single power supply with a wide input range of 4.5 to 60-V. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control, and provides overdrive gate drive voltage of external switches. The DRV8334 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement. A wide range of diagnostics and protection features integrated in the DRV8334 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs. The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.7-mA up to 1-A source and 2-A sink. The DRV8334 can operate from a single power supply with a wide input range of 4.5 to 60-V. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control, and provides overdrive gate drive voltage of external switches. The DRV8334 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement. A wide range of diagnostics and protection features integrated in the DRV8334 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.