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20 V, single N-channel Trench MOSFET
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20 V, single N-channel Trench MOSFET
20 V, single N-channel Trench MOSFET
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Power Dissipation (Max) | Vgs (Max) | Package / Case | Technology | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | -55 °C | 150 °C | 1 A | DFN1006B-3 | N-Channel | 2.7 W 360 mW | 8 V | 3-XFDFN | MOSFET (Metal Oxide) | Surface Mount | 1.8 V 4.5 V | 380 mOhm | 0.68 nC | 20 V | 950 mV |