R6010YND3 Series

600V 10A, TO-252 (DPAK), High-speed switching Power MOSFET

Catalog

600V 10A, TO-252 (DPAK), High-speed switching Power MOSFET

Part	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Rohm Semiconductor R6010YND3TL1	150 °C	10 V 12 V	MOSFET (Metal Oxide)	TO-252	600 V	30 V	N-Channel	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	390 mOhm	6 V	600 pF	10 A	92 W

600V 10A, TO-252 (DPAK), High-speed switching Power MOSFET

• Low on-resistance, Fast switching, Drive circuits can be simple, Pb-free lead plating; RoHS compliant, Halogen free mold compound

R6010YND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.