BD237(LEGACY%20FAIRCHILD) Series

2.0 A, 100 V, 25W NPN Epitaxial Silicon Bipolar Power Transistor

Catalog

2.0 A, 100 V, 25W NPN Epitaxial Silicon Bipolar Power Transistor

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Package / Case
ON Semiconductor BD237STU	2 A	3 MHz	25 hFE	80 V	150 °C	100 µA	Through Hole	25 W	600 mV	NPN	TO-126-3	TO-126-3 TO-225AA

Catalog

2.0 A, 100 V, 25W NPN Epitaxial Silicon Bipolar Power Transistor

Key Features

• DC Current Gain hFE= 40 (Min) @ IC= 0.15 Adc

• Pb-Free Packages are Available

Description

The 2 A, 80 V, 25W NPN Bipolar Power Transistor is designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. BD237 (NPN), BD234 (PNP) and BD238 (PNP) are complementary devices.