Catalog
650V, 10A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (Surface mount package)
Beta
⌘K
650V, 10A, SMD, Silicon-carbide (SiC) SBD
650V, 10A, SMD, Silicon-carbide (SiC) SBD
| Part | Technology | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Package / Case | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Mounting Type | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | SiC (Silicon Carbide) Schottky | TO-263AB | 500 mA | 200 µA | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 0 ns | 10 A | Surface Mount | 365 pF | 650 V | 1.55 V |