SQJQ466 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 60V 200A PPAK 8 X 8
| Part | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Technology | Vgs(th) (Max) @ Id | Vgs (Max) | Grade | Qualification | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 V | 180 nC | 1.9 mOhm | 60 V | 150 W | 10210 pF | PowerPAK® 8 x 8 | MOSFET (Metal Oxide) | 3.5 V | 20 V | Automotive | AEC-Q101 | -55 °C | 175 ░C | Surface Mount | 200 A | PowerPAK® 8 x 8 | N-Channel |