FDD10N20LZ Series

Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 7.6 A, 360 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 7.6 A, 360 mΩ, DPAK

Part	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type
ON Semiconductor FDD10N20LZTM	MOSFET (Metal Oxide)	10 V	5 V	580 pF	-55 °C	150 °C	83 W	7.6 A	TO-252AA	360 mOhm	200 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	2.5 V	16 nC	20 V	Surface Mount

Catalog

Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 7.6 A, 360 mΩ, DPAK

Key Features

• RDS(on)= 300mΩ ( Typ.)@ VGS= 10V, ID= 3.8A

• Low gate charge ( Typ. 12nC)

• Low Crss( Typ. 11pF)

• 100% avalanche tested

• Improved dv/dt capability

• ESD improved capability

• RoHS compliant

Description

UniFETTMMOSFET is an high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.