VO618 Series
Manufacturer: Vishay Semiconductor Opto Division
OPTOISOLATOR 5.3KV TRANS 4-DIP
| Part | Output Type | Voltage - Isolation [custom] | Current - DC Forward (If) (Max) [Max] | Number of Channels [custom] | Package / Case | Package / Case | Package / Case | Mounting Type | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) [Max] | Rise / Fall Time (Typ) | Voltage - Forward (Vf) (Typ) | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Current - Output / Channel [custom] | Input Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Current Transfer Ratio (Min) [Min] | Current Transfer Ratio (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Opto Division | Transistor | 5300 Vrms | 60 mA | 1 | 0.3 in | 4-DIP | 7.62 mm | Through Hole | 2.3 µs 3 µs | 400 mV | 2 µs | 1.1 V | 63 % | 125 % | 50 mA | DC | -55 C | 110 °C | 4-DIP | ||
Vishay Semiconductor Opto Division | Transistor | 5300 Vrms | 60 mA | 1 | 4-SMD Gull Wing | Surface Mount | 2.3 µs 3 µs | 400 mV | 2 µs | 1.1 V | 200 % | 50 mA | DC | -55 C | 110 °C | 4-SMD | 100 % | ||||
Vishay Semiconductor Opto Division | Transistor | 5300 Vrms | 60 mA | 1 | 4-SMD Gull Wing | Surface Mount | 2.3 µs 3 µs | 400 mV | 2 µs | 1.1 V | 160 % | 50 mA | DC | -55 C | 110 °C | 4-SMD | 320 % | ||||
Vishay Semiconductor Opto Division | Transistor | 5300 Vrms | 60 mA | 1 | 0.3 in | 4-DIP | 7.62 mm | Through Hole | 2.3 µs 3 µs | 400 mV | 2 µs | 1.1 V | 160 % | 50 mA | DC | -55 C | 110 °C | 4-DIP | 320 % | ||
Vishay Semiconductor Opto Division | Transistor | 5300 Vrms | 60 mA | 1 | 4-DIP (0.400" 10.16mm) | Through Hole | 2.3 µs 3 µs | 400 mV | 2 µs | 1.1 V | 160 % | 50 mA | DC | -55 C | 110 °C | 4-DIP | 320 % | ||||
Vishay Semiconductor Opto Division | Transistor | 5300 Vrms | 60 mA | 1 | 0.3 in | 4-DIP | 7.62 mm | Through Hole | 2.3 µs 3 µs | 400 mV | 2 µs | 1.1 V | 50 % | 50 mA | DC | -55 C | 110 °C | 4-DIP | 600 % | ||
Vishay Semiconductor Opto Division | Transistor | 5300 Vrms | 60 mA | 1 | 0.3 in | 4-DIP | 7.62 mm | Through Hole | 2.3 µs 3 µs | 400 mV | 2 µs | 1.1 V | 200 % | 50 mA | DC | -55 C | 110 °C | 4-DIP | 100 % |