VO617 Series
Manufacturer: Vishay Semiconductor Opto Division
OPTOISOLATOR 5.3KV TRANS 4-SMD
| Part | Voltage - Isolation [custom] | Vce Saturation (Max) [Max] | Number of Channels [custom] | Current - Output / Channel [custom] | Current - DC Forward (If) (Max) [Max] | Current Transfer Ratio (Max) | Input Type | Operating Temperature [Min] | Operating Temperature [Max] | Current Transfer Ratio (Min) | Rise / Fall Time (Typ) | Output Type | Package / Case | Mounting Type | Supplier Device Package | Voltage - Forward (Vf) (Typ) | Turn On / Turn Off Time (Typ) | Current Transfer Ratio (Max) [Max] | Package / Case | Package / Case | Current Transfer Ratio (Min) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | 320 % | DC | -55 C | 110 °C | 160 % | 2 µs | Transistor | 4-SMD Gull Wing | Surface Mount | 4-SMD | 1.35 V | 2.3 µs 3 µs | ||||
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | 320 % | DC | -55 C | 110 °C | 160 % | 2 µs | Transistor | 4-SMD Gull Wing | Surface Mount | 4-SMD | 1.35 V | 2.3 µs 3 µs | ||||
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | DC | -55 C | 110 °C | 130 % | 2 µs | Transistor | 4-DIP | Through Hole | 4-DIP | 1.35 V | 2.3 µs 3 µs | 260 % | 0.3 in | 7.62 mm | ||
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | DC | -55 C | 110 °C | 2 µs | Transistor | 4-DIP | Through Hole | 4-DIP | 1.35 V | 2.3 µs 3 µs | 200 % | 0.3 in | 7.62 mm | 100 % | ||
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | 160 % | DC | -55 C | 110 °C | 80 % | 2 µs | Transistor | 4-SMD Gull Wing | Surface Mount | 4-SMD | 1.35 V | 2.3 µs 3 µs | ||||
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | DC | -55 C | 110 °C | 2 µs | Transistor | 4-DIP (0.400" 10.16mm) | Through Hole | 4-DIP | 1.35 V | 2.3 µs 3 µs | 200 % | 100 % | ||||
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | DC | -55 C | 110 °C | 2 µs | Transistor | 4-SMD Gull Wing | Surface Mount | 4-SMD | 1.35 V | 2.3 µs 3 µs | 200 % | 100 % | ||||
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | DC | -55 C | 110 °C | 2 µs | Transistor | 4-DIP (0.400" 10.16mm) | Through Hole | 4-DIP | 1.35 V | 2.3 µs 3 µs | 200 % | 100 % | ||||
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | DC | -55 C | 110 °C | 2 µs | Transistor | 4-SMD Gull Wing | Surface Mount | 4-SMD | 1.35 V | 2.3 µs 3 µs | 200 % | 100 % | ||||
Vishay Semiconductor Opto Division | 5300 Vrms | 400 mV | 1 | 50 mA | 60 mA | 320 % | DC | -55 C | 110 °C | 160 % | 2 µs | Transistor | 4-DIP (0.400" 10.16mm) | Through Hole | 4-DIP | 1.35 V | 2.3 µs 3 µs |