SISH625 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 30V 17.3A/35A PPAK
| Part | Supplier Device Package | Vgs (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8SH | 20 V | P-Channel | 126 nC | 4427 pF | 30 V | -55 °C | 150 °C | 17.3 A 35 A | MOSFET (Metal Oxide) | PowerPAK® 1212-8SH | 7 mOhm | 3.7 W 52 W | 4.5 V 10 V | 2.5 V | Surface Mount |