Catalog
600 V, 0.1 A PNP high-voltage low VCEsat transistor
Description
AI
PNP high-voltage low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
600 V, 0.1 A PNP high-voltage low VCEsat transistor
600 V, 0.1 A PNP high-voltage low VCEsat transistor
| Part | Operating Temperature | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | Current - Collector (Ic) (Max) [Max] | Qualification | Vce Saturation (Max) @ Ib, Ic | Package / Case | Mounting Type | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Transistor Type | Grade | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 150 °C | 650 mW | 600 V | 38 MHz | 100 mA | AEC-Q100 | 250 mV | TO-261-4 TO-261AA | Surface Mount | SOT-223 | 100 nA | PNP | Automotive | 70 |