1N8024 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE SIL CARB 1200V 750MA TO257
| Part | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Capacitance @ Vr, F | Technology | Supplier Device Package | Mounting Type | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 1.74 V | 10 µA | 750 mA | 66 pF | SiC (Silicon Carbide) Schottky | TO-257 | Through Hole | -55 °C | 250 °C | TO-257-3 | 1.2 kV | 500 mA | 0 ns |