IR2181 Series
Manufacturer: INFINEON
DRIVER 600V 2-OUT HIGH SIDE/LOW SIDE NON-INV 8-PIN PDIP TUBE
| Part | Gate Type | Channel Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Voltage - Supply [Max] | Voltage - Supply [Min] | Logic Voltage - VIL, VIH | Driven Configuration | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Type | Number of Drivers | Supplier Device Package | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 1.9 A | 2.3 A | 600 V | 20 V | 10 VDC | 0.8 V 2.7 V | Half-Bridge | 8-DIP (0.300" 7.62mm) | Through Hole | -40 °C | 150 °C | Non-Inverting | 2 | 8-PDIP | 20 ns | 40 ns | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 1.9 A | 2.3 A | 600 V | 20 V | 10 VDC | 0.8 V 2.7 V | Half-Bridge | 8-DIP (0.300" 7.62mm) | Through Hole | -40 °C | 150 °C | Non-Inverting | 2 | 8-PDIP | 20 ns | 40 ns | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 1.9 A | 2.3 A | 600 V | 20 V | 10 VDC | 0.8 V 2.7 V | Half-Bridge | 8-DIP (0.300" 7.62mm) | Through Hole | -40 °C | 150 °C | Non-Inverting | 2 | 8-PDIP | 20 ns | 40 ns | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 1.9 A | 2.3 A | 600 V | 20 V | 10 VDC | 0.8 V 2.7 V | Half-Bridge | 8-SOIC | Surface Mount | -40 °C | 150 °C | Non-Inverting | 2 | 8-SOIC | 20 ns | 40 ns | 0.154 in | 3.9 mm |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 1.9 A | 2.3 A | 600 V | 20 V | 10 VDC | 0.8 V 2.7 V | Half-Bridge | 8-SOIC | Surface Mount | -40 °C | 150 °C | Non-Inverting | 2 | 8-SOIC | 20 ns | 40 ns | 0.154 in | 3.9 mm |