High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.3 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.3 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.3 Ω@10V, TO-220, DTMOSⅣ
| Part | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Power Dissipation (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 10 V | Through Hole | MOSFET (Metal Oxide) | 650 V | 4.5 V | 150 °C | 13.7 A | 1300 pF | TO-220-3 | 130 W | N-Channel | 40 nC | TO-220 | 300 mOhm | 30 V |