RN1709 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
| Part | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Resistor - Emitter Base (R2) | Transistor Type | Mounting Type | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Resistor - Base (R1) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 100 mW | 300 mV | 250 MHz | 70 hFE | SOT-553 | 50 V | 22 kOhms | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | Surface Mount | 100 mA | ESV | 500 nA | 47 kOhms |