SI7888 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 30V 9.4A PPAK SO-8
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 9.4 A | 10.5 nC | 2 V | 12 V | 4.5 V 10 V | PowerPAK® SO-8 | N-Channel | 12 mOhm | PowerPAK® SO-8 | 1.8 W | -55 °C | 150 °C | 30 V | Surface Mount |