High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 1.9 Ω@10V, TO-220SIS, π-MOSⅨ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 1.9 Ω@10V, TO-220SIS, π-MOSⅨ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 1.9 Ω@10V, TO-220SIS, π-MOSⅨ
| Part | FET Type | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | N-Channel | 30 V | Through Hole | 490 pF | 10 V | 14 nC | MOSFET (Metal Oxide) | 3.7 A | 1.9 Ohm | TO-220SIS | 4 V | 600 V | TO-220-3 Full Pack | 150 °C |