SIHP24 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 650V 24A TO220AB
| Part | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2740 pF | 250 W | TO-220AB | -55 °C | 150 °C | Through Hole | 650 V | 122 nC | 30 V | 145 mOhm | MOSFET (Metal Oxide) | 10 V | TO-220-3 | N-Channel | 24 A | 4 V |