BUK6Q66-60P Series
Manufacturer: Nexperia USA Inc.
Catalog
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BUK6Q66-60P/SOT8002/MLPAK33
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Power Dissipation (Max) [Max] | Grade | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Qualification | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1070 pF | 175 °C | -55 °C | 8-PowerVDFN | 56 W | Automotive | 60 V | 66 mOhm | P-Channel | MOSFET (Metal Oxide) | 4.5 V 10 V | 2.7 V | AEC-Q101 | 20 V | 28 nC | MLPAK33 | 20 A | Surface Mount Wettable Flank |