FDT434P Series

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -5.5A, 50mΩ

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -5.5A, 50mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Technology
ON Semiconductor FDT434P	19 nC	50 mOhm	TO-261-4 TO-261AA	6 A	1187 pF	8 V	2.5 V 4.5 V	Surface Mount	-55 °C	150 °C	3 W	20 V	SOT-223-4	1 V	P-Channel	MOSFET (Metal Oxide)

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -5.5A, 50mΩ

Key Features

-5.5 A, -20 VRDS(on)= 0.050 Ω @ VGS= -4.5 VRDS(on)= 0.070 Ω @ VGS= -2.5 V

• Low gate charge (13nC typical).

• High performance trench technology for extremelylow RDS(on).

• High power and current handling capability in a widely used surface mount package.

Description

This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.