High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 4.1 Ω@10V, TO-220SIS, π-MOSⅨ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 4.1 Ω@10V, TO-220SIS, π-MOSⅨ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 4.1 Ω@10V, TO-220SIS, π-MOSⅨ
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 270 pF | 600 V | Through Hole | N-Channel | MOSFET (Metal Oxide) | 10 V | 4 V | 2 A | TO-220SIS | 4.1 Ohm | TO-220-3 Full Pack | 8 nC | 30 V | 150 °C |