RN2610 Series
Manufacturer: Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SM6
| Part | Resistor - Base (R1) | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Package / Case | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Transistor Type | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4.7 kOhms | 50 V | 300 mW | SC-74 SOT-457 | 200 MHz | 300 mV | 120 | Surface Mount | 2 PNP - Pre-Biased (Dual) | SM6 | 100 nA | 100 mA |