FDD3690 Series

100V N-Channel PowerTrench® MOSFET 22A, 64mΩ

Catalog

100V N-Channel PowerTrench® MOSFET 22A, 64mΩ

Part	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type
ON Semiconductor FDD3690	DPAK (2 Leads + Tab) SC-63 TO-252-3	64 mOhm	4 V	20 V	22 A	6 V 10 V	100 V	TO-252AA	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	39 nC	1514 pF	3.8 W 60 W	Surface Mount

Catalog

100V N-Channel PowerTrench® MOSFET 22A, 64mΩ

Key Features

• 22 A, 100 V.

• RDS(ON)= 64 mΩ @ VGS= 10 V

• RDS(ON)= 71 mΩ @ VGS= 6 V

• Low gate charge (28 nC typical).

• Fast switching.

• High performance trench technology for extremelylow RDS(ON).

• High power and current handling capability.

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.