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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs (Max) | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 5.5 A | 1 V | 1.8 V 4.5 V | 700 mW | 8 V | P-Channel | Surface Mount | 1291 pF | 23.7 nC | 3-XFDFN | DFN2015H4-3 | 32 mOhm | MOSFET (Metal Oxide) | -55 °C | 150 °C | 12 V |